电子束提纯多晶硅工艺研究
高孝书
（宁夏职业技术学院能源与化工技术系，宁夏银川750021）
摘要： 重点介绍了电子束提纯多晶硅原理、电子束提纯炉工作原理、电子束提纯炉设备结构、电子束炉熔炼时间和
熔炼温度选择。在实验环境中，炉室真空保持在1.0×10-2 Pa以上，电子枪功率保持在250 kW，实验结果发现，熔炼40
min后主要杂质元素含量可以降低一个数量级。
关键词： 电子束提纯；多晶硅；挥发速率；真空冶金
中图分类号： TN304 文献标识码： A 文章编号： 2095-0802-(2015)12-0077-02
Process Study on the Polycrystalline Silicon Purification by Electron Beam
GAO Xiaoshu
(Energy and Chemical Technology Department, Ningxia Vocational and Technical College, Yinchuan 750021, Ningxia, China)
Abstract: This paper emphatically introduced polycrystalline silicon purification principle by electron beam, operating principle
and structure of equipment of electron beam refining furnace, melting time and melting temperature selection of electron beam
furnace. In the experimental environment, keep the furnace chamber vacuum at 1.0伊10-2 Pa above and electron gun power at 250
kW. The result of experiment showed that the main content of impurity elements can reduce an order of magnitude after melting
40 min.

Key words: electron beam purification；polysilicon；evaporation rate；vacuum metallurgy